Silicon carbide rod is a silicon carbide ceramic product sintered at a high temperature of 1850°C. When used at a temperature below 1350°C, the strength of the silicon carbide rod can still reach 380MPa; its hardness is second only to diamond, and it will not wear out after long-term use.
Silicon carbide rod are indispensable carriers in the production and synthesis of semiconductor and solar wafers. It is used in the (diffusion) coating process of polycrystalline silicon wafers or monocrystalline silicon wafers in diffusion furnaces, and it is used to carry and transport silicon wafers in a high temperature environment (1000---1300℃). It is a semiconductor wafer loading system. key components.
长度(m) Longth(m) | 截面尺寸Section size | 集中承载力(kg) Concentrated bearing capacity(kg) | 均布力合力(kg) | ||
L | D1 | D2 | δ | Uniformbearing capacity(kg) | |
1 | 35 | 23 | 6 | 70 | 140 |
1 | 40 | 28 | 6 | 97 | 194 |
1 | 45 | 33 | 6 | 130 | 260 |
1 | 60 | 46 | 7 | 283 | 566 |
1 | 80 | 46 | 8 | 604 | 1208 |